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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -230 -230 -5 -15 -1.5 UNIT V V V A A W ae ae TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA1986 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -230 V VCEsat VBE Collector-emitter saturation voltage IC=-8 A;IB=-0.8A IC=-7A ; VCE=-5V -3.0 V Base-emitter voltage -1.5 V ICBO Collector cut-off current VCB=-230V; IE=0 -5 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -5 |I A hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain fT COB Transition frequency Output capacitance ANG CH O IC=-7A ; VCE=-5V 35 IC=-1A ; VCE=-5V hFE-1 classifications R 55-110 IN EMIC ES IE=0; VCB=-10V;f=1MHz DUC ON 360 30 TOR MHz pF 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1986 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1986 SEM GE HAN INC OND IC TOR UC 4 |
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